Kum 50 kalta khan miten semiconductor materials hian light a siam thei tih hriatna bulpui chu an hrethiam tawh a, sumdawnna atana hman theih diode hmasa ber chu kum 1960 khan siam a ni a, LED hi Light Emitting Diode tih tawi a ni. A structure bulpui ber chu electroluminescent semiconductor material lead frame-a dah a ni a, chutah chuan epoxy resin hmanga seal a ni a, chu chuan internal core wire-te a humhim a, LED-te chu shock resistance tha tak a pe a ni.
Light-emitting diode core chu p-type leh n-type semiconductor atanga siam chip a ni. p-type leh n-type semiconductor inkarah hian ap-n junction an tih transition layer a awm a. Semiconductor material thenkhat PN junction-ah chuan injected minority carrier te chu majority carrier te nen an inzawm leh chuan a tam zawk chu light angin a chhuak a, chu chuan electrical energy chu direct in light energy ah a chantir ta a ni. PN junction-a reverse voltage pek a nih chuan minority carrier-te chu inject a harsa a, chuvangin light a chhuak lo.
Hetiang diode chi hi injection electroluminescence principle hmanga siam hi light-emitting diode an ti a, LED tia hriat lar a ni. Forward operating state-a a awm lai (chu chu a terminal hrang hrangah forward voltage dah a nih chuan), LED anode atanga cathode-a current a luang chhuah rualin, semiconductor crystal hian ultraviolet atanga infrared thlenga êng rawng hrang hrang a pe chhuak a, chu êng chakna chu current nen a inzawm a ni.
